 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| inchange semiconductor isc product specification isc silicon npn darlington power transistor bdt63/a/b/c description collector current -i c = 10a high dc current gain-h fe = 1000(min)@ i c = 3a complement to type bdt62/a/b/c applications designed for audio output stages and general purpose amplifier applications absolute maximum ratings(t a =25 ) symbol parameter value unit bdt63 60 bdt63a 80 BDT63B 100 v cer collector-emitter voltage bdt63c 120 v bdt63 60 bdt63a 80 BDT63B 100 v ceo collector-emitter voltage bdt63c 120 v v ebo emitter-base voltage 5 v i c collector current-continuous 10 a i cm collector current-peak 15 a i b b base current-continuous 0.25 a p c collector power dissipation @ t c =25 90 w t j junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance, junction to case 1.39 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn darlington power transistor bdt63/a/b/c electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit bdt63 60 bdt63a 80 BDT63B 100 v (br)ceo collector-emitter breakdown voltage bdt63c i c = 30ma ;i b =0 b 120 v v ce(sat)-1 collector-emitter saturation voltage i c = 3a; i b = 12ma b 2.0 v v ce(sat)-2 collector-emitter saturation voltage i c = 8a; i b = 80ma b 2.5 v v be( on ) base-emitter on voltage i c = 3a ; v ce = 3v 2.5 v v ecf c-e diode forward voltage i f = 3a 2.0 v i ceo collector cutoff current v ce = 1 / 2 v ceomax ; i b = 0 0.5 ma i cbo collector cutoff current v cb = v cbomax ;i e = 0 v cb = 1 / 2 v cbomax ;i e = 0;t c = 150 0.2 2.0 ma i ebo emitter cutoff current v eb = 5v; i c =0 5 ma h fe-1 dc current gain i c = 3a ; v ce = 3v 1000 h fe-2 dc current gain i c = 10a ; v ce = 3v 3000 c ob output capacitance i e = 0 ; v cb = 10v; f test = 1mhz 100 pf switching times t on turn-on time 1.0 2.5 s t off turn-off time i c = 3a; i b1 = -i b2 = 12ma; v cc = 10v 5.0 10 s isc website www.iscsemi.cn 2 |
Price & Availability of BDT63B
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |